PART |
Description |
Maker |
STP80N20M5 STB80N20M5 |
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in D2PAK Package 65 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK
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ST Microelectronics STMICROELECTRONICS
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HUF75332S3S HUF75332P3 HUF75332G3 FN4489 |
60A/ 55V/ 0.019 Ohm/ N-Channel UltraFET Power MOSFETs 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
NTQD4154Z |
7.5 A, 20 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
ON SEMICONDUCTOR
|
HPLU3103 HPLR3103 FN4501 HPLRB3103 |
52A/ 30V/ 0.019 Ohm/ N-Channel Logic Level/ Power MOSFETs 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
SML10B75XX |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
NP34N055IHE NP34N055HHE NP34N055HHE-AZ |
Nch MOS FET for High-speed switching SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 34 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
|
NEC[NEC] Cypress Semiconductor, Corp.
|
MS235RAA19NGSN |
1 ELEMENT, 0.019 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
COILCRAFT INC
|
MS235RAG19NGSN |
1 ELEMENT, 0.019 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
COILCRAFT INC
|
HUFA75339G3 HUFA75339P3 HUFA75339S3S HUFA75332S3S |
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs 75 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 75A 55V 0.012 Ohm N-Channel UltraFET Power MOSFETs 60A/ 55V/ 0.019 Ohm/ N-Channel UltraFET Power MOSFETs
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
CMU2C-456A02 CMU2C-456A10 CMU2C-456A06 |
CERAMIC RESONATOR, 0.019 MHz CERAMIC RESONATOR, 0.01895 MHz CERAMIC RESONATOR, 0.456 MHz
|
TOKO INC
|
EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD Sanyo Semicon Device
|
FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
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